F160C3TC memory equivalent, advanced boot block flash memory.
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Flexible SmartVoltage Technology — 2.7 V
– 3.6 V Read/Program/Erase — 12 V for Fast Pr.
The C3 device incorporates low-voltage capability (3 V read, program, and erase) with highspeed, low-power operation. F.
at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for confl.
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